Beyond Silicon: 2D and Layered Materials for Future Electronics

A digital model of a monolayer thick molybdenite transistor (Credit: EPFL)
Friday, March 16, 2018 - 16:00 to 17:00
Physics Chemistry Theatre

Dr. Lee Walsh

Tyndall National Institute

Abstract: Silicon has been at the heart of the microelectronic industry since it’s inception, but the end appears to be in sight. As the device dimensions continue to decrease various 'short channel effects' will begin to limit performance. This has led the field to look at alternative materials. Recently the focus has fallen on the 2D and layered materials including transition metal dichalcogenides and topological insulators. Their atomically thin nature allows for ultimate scaling in traditional devices along with new applications in flexible and wearable technologies. This talk will begin by introducing these materials and explore their basic properties and potential advantages. I will then discuss my own work in moving these materials from the lab to the fab by exploring the specific issues regarding their growth and integration into devices.